Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > BYG20GHE3_A/H
BYG20GHE3_A/H

BYG20GHE3_A/H Vishay General Semiconductor - Diodes Division

byg20d.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.32 EUR
3600+0.29 EUR
5400+0.27 EUR
9000+0.26 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BYG20GHE3_A/H Vishay General Semiconductor - Diodes Division

Description: DIODE AVAL 400V 1.5A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Avalanche, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BYG20GHE3_A/H nach Preis ab 0.26 EUR bis 1.27 EUR

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BYG20GHE3_A/H BYG20GHE3_A/H Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9170 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.25 EUR
23+0.78 EUR
100+0.5 EUR
500+0.38 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BYG20GHE3_A/H BYG20GHE3_A/H Vishay Semiconductors byg20d.pdf Rectifiers 1.5A,400V,75nS AVAL AEC-Q101 Qualified
auf Bestellung 3260 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.27 EUR
10+0.78 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.32 EUR
1800+0.29 EUR
3600+0.26 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
BYG20GHE3_A/H byg20d.pdf
BYG20GHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
23+0.78 EUR
100+0.5 EUR
500+0.38 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BYG20GHE3_A/H byg20d.pdf
BYG20GHE3_A/H
Hersteller: Vishay Semiconductors
Rectifiers 1.5A,400V,75nS AVAL AEC-Q101 Qualified
auf Bestellung 3260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.27 EUR
10+0.78 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.32 EUR
1800+0.29 EUR
3600+0.26 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH