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BYG21MHE3_A/H

BYG21MHE3_A/H Vishay General Semiconductor - Diodes Division

byg21k.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+0.2 EUR
3600+0.19 EUR
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BYG21MHE3_A/H Vishay General Semiconductor - Diodes Division

Description: DIODE AVALANCHE 1KV 1.5A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 120 ns, Technology: Avalanche, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V, Qualification: AEC-Q101.

Weitere Produktangebote BYG21MHE3_A/H nach Preis ab 0.35 EUR bis 1.78 EUR

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BYG21MHE3_A/H BYG21MHE3_A/H Vishay General Semiconductor - Diodes Division byg21k.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 3813 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
33+0.64 EUR
100+0.45 EUR
500+0.35 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG21MHE3_A/H BYG21MHE3_A/H Vishay Semiconductors byg21k.pdf Rectifiers 1.5A,1000V,120NS AEC-Q101 Qualified
auf Bestellung 7167 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.78 EUR
10+1.13 EUR
100+0.73 EUR
500+0.55 EUR
1000+0.45 EUR
1800+0.4 EUR
3600+0.36 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG21MHE3_A/H byg21k.pdf
BYG21MHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 3813 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
33+0.64 EUR
100+0.45 EUR
500+0.35 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BYG21MHE3_A/H byg21k.pdf
BYG21MHE3_A/H
Hersteller: Vishay Semiconductors
Rectifiers 1.5A,1000V,120NS AEC-Q101 Qualified
auf Bestellung 7167 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+1.78 EUR
10+1.13 EUR
100+0.73 EUR
500+0.55 EUR
1000+0.45 EUR
1800+0.4 EUR
3600+0.36 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH