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BYG23MHE3_A/I

BYG23MHE3_A/I Vishay General Semiconductor - Diodes Division

byg23m.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+0.21 EUR
Mindestbestellmenge: 7500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BYG23MHE3_A/I Vishay General Semiconductor - Diodes Division

Description: DIODE AVALANCHE 1KV 1.5A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Avalanche, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Qualification: AEC-Q101.

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BYG23MHE3_A/I BYG23MHE3_A/I Vishay General Semiconductor byg23m.pdf Rectifiers 1.5A,1000V,75nS AVAL AEC-Q101 Qualified
auf Bestellung 4237 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.73 EUR
10+0.48 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.22 EUR
5000+0.2 EUR
7500+0.17 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BYG23MHE3_A/I BYG23MHE3_A/I Vishay General Semiconductor - Diodes Division byg23m.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 14900 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
28+0.64 EUR
100+0.38 EUR
500+0.35 EUR
1000+0.24 EUR
2000+0.22 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
BYG23MHE3_A/I byg23m.pdf
BYG23MHE3_A/I
Hersteller: Vishay General Semiconductor
Rectifiers 1.5A,1000V,75nS AVAL AEC-Q101 Qualified
auf Bestellung 4237 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.73 EUR
10+0.48 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.22 EUR
5000+0.2 EUR
7500+0.17 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BYG23MHE3_A/I byg23m.pdf
BYG23MHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 14900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
28+0.64 EUR
100+0.38 EUR
500+0.35 EUR
1000+0.24 EUR
2000+0.22 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH