BYG23MHE3_A/I

BYG23MHE3_A/I Vishay General Semiconductor - Diodes Division


byg23m.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7500+0.21 EUR
Mindestbestellmenge: 7500
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Technische Details BYG23MHE3_A/I Vishay General Semiconductor - Diodes Division

Description: DIODE AVALANCHE 1KV 1.5A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Avalanche, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Qualification: AEC-Q101.

Weitere Produktangebote BYG23MHE3_A/I nach Preis ab 0.28 EUR bis 0.81 EUR

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BYG23MHE3_A/I BYG23MHE3_A/I Hersteller : Vishay General Semiconductor - Diodes Division byg23m.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
28+ 0.79 EUR
100+ 0.48 EUR
500+ 0.44 EUR
1000+ 0.3 EUR
2000+ 0.28 EUR
Mindestbestellmenge: 22
BYG23MHE3_A/I BYG23MHE3_A/I Hersteller : Vishay byg23m.pdf Rectifier Diode Switching 1KV 1.5A 75ns Automotive 2-Pin SMA T/R
Produkt ist nicht verfügbar
BYG23MHE3_A/I BYG23MHE3_A/I Hersteller : Vishay byg23m.pdf Rectifier Diode Switching 1KV 1.5A 75ns Automotive AEC-Q101 2-Pin SMA T/R
Produkt ist nicht verfügbar
BYG23MHE3_A/I BYG23MHE3_A/I Hersteller : Vishay General Semiconductor byg23m.pdf Rectifiers 1.5A,1000V,75nS AVAL AEC-Q101 Qualified
Produkt ist nicht verfügbar