
BYM36E-TAP Vishay General Semiconductor - Diodes Division

Description: DIODE AVALANCHE 1000V 2.9A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Avalanche
Current - Average Rectified (Io): 2.9A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2500+ | 0.71 EUR |
5000+ | 0.68 EUR |
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Technische Details BYM36E-TAP Vishay General Semiconductor - Diodes Division
Category: THT universal diodes, Description: Diode: rectifying; THT; 1kV; 2.9A; Ammo Pack; Ifsm: 65A; SOD64; 150ns, Type of diode: rectifying, Semiconductor structure: single diode, Mounting: THT, Case: SOD64, Reverse recovery time: 150ns, Leakage current: 0.1mA, Load current: 2.9A, Max. forward voltage: 1.28V, Max. forward impulse current: 65A, Max. off-state voltage: 1kV, Kind of package: Ammo Pack, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BYM36E-TAP nach Preis ab 0.55 EUR bis 1.97 EUR
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BYM36E-TAP | Hersteller : VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 2.9A; Ammo Pack; Ifsm: 65A; SOD64; 150ns Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Case: SOD64 Reverse recovery time: 150ns Leakage current: 0.1mA Load current: 2.9A Max. forward voltage: 1.28V Max. forward impulse current: 65A Max. off-state voltage: 1kV Kind of package: Ammo Pack Features of semiconductor devices: avalanche breakdown effect; glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2386 Stücke: Lieferzeit 7-14 Tag (e) |
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BYM36E-TAP | Hersteller : VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 2.9A; Ammo Pack; Ifsm: 65A; SOD64; 150ns Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Case: SOD64 Reverse recovery time: 150ns Leakage current: 0.1mA Load current: 2.9A Max. forward voltage: 1.28V Max. forward impulse current: 65A Max. off-state voltage: 1kV Kind of package: Ammo Pack Features of semiconductor devices: avalanche breakdown effect; glass passivated |
auf Bestellung 2386 Stücke: Lieferzeit 14-21 Tag (e) |
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BYM36E-TAP | Hersteller : Vishay Semiconductors |
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auf Bestellung 773 Stücke: Lieferzeit 10-14 Tag (e) |
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BYM36E-TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Avalanche Current - Average Rectified (Io): 2.9A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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BYM36E-TAP | Hersteller : Vishay |
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