BYR29X-800PQ WeEn Semiconductors
auf Bestellung 3368 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.37 EUR |
| 10+ | 1.18 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.58 EUR |
| 2000+ | 0.52 EUR |
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Technische Details BYR29X-800PQ WeEn Semiconductors
Description: DIODE GEN PURP 800V 8A TO220FP, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 55 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220FP, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.
Weitere Produktangebote BYR29X-800PQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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BYR29X-800PQ | Hersteller : NXP Semiconductors |
 Diode Switching 800V 8A 2-Pin(2+Tab) TO-220F |
Produkt ist nicht verfügbar |
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| BYR29X-800PQ | Hersteller : WeEn Semiconductors |
Description: DIODE GEN PURP 800V 8A TO220FP Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220FP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |