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BYR29X-800PQ

BYR29X-800PQ WeEn Semiconductors

BYR29X-800P-1115377.pdf Hersteller: WeEn Semiconductors
Diodes - General Purpose, Power, Switching BYR29X-800P/TO-220F/STANDARD M
auf Bestellung 4096 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.25 EUR
27+ 1.99 EUR
100+ 1.53 EUR
500+ 1.21 EUR
1000+ 0.96 EUR
2000+ 0.88 EUR
5000+ 0.8 EUR
Mindestbestellmenge: 24
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Technische Details BYR29X-800PQ WeEn Semiconductors

Description: DIODE GEN PURP 800V 8A TO220FP, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 55 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220FP, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.

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BYR29X-800PQ BYR29X-800PQ Hersteller : NXP Semiconductors 4byr29x-800p.pdf Diode Switching 800V 8A 2-Pin(2+Tab) TO-220F
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BYR29X-800PQ Hersteller : WeEn Semiconductors byr29x-800p.pdf Description: DIODE GEN PURP 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar