BYR29X-800PQ WeEn Semiconductors
| Anzahl | Preis |
|---|---|
| 3+ | 1.37 EUR |
| 10+ | 1.18 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.58 EUR |
| 2000+ | 0.52 EUR |
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Technische Details BYR29X-800PQ WeEn Semiconductors
Description: DIODE GEN PURP 800V 8A TO220FP, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220FP, Current - Average Rectified (Io): 8A, Technology: Standard, Reverse Recovery Time (trr): 55 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Isolated Tab, Packaging: Tube.
Weitere Produktangebote BYR29X-800PQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BYR29X-800PQ | Hersteller : WeEn |
 8A, 800V, TO-220AC Група товару: Діоди та діодні збірки Од. вим: шт |
Produkt ist nicht verfügbar |
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| BYR29X-800PQ | Hersteller : WeEn Semiconductors |
Description: DIODE GEN PURP 800V 8A TO220FP Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220FP Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Packaging: Tube |
Produkt ist nicht verfügbar |