Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > BYS10-35HE3/TR3
BYS10-35HE3/TR3

BYS10-35HE3/TR3 Vishay General Semiconductor - Diodes Division

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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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Technische Details BYS10-35HE3/TR3 Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 35V 1.5A DO214AC, Current - Reverse Leakage @ Vr: 500 µA @ 35 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 35 V, Part Status: Discontinued at Digi-Key, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1.5A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).