Technische Details BYT30PI1000 ST
Description: DIODE GEN PURP 1KV 30A DOP3I, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Part Status: Obsolete, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: DOP3I, Current - Average Rectified (Io): 30A, Technology: Standard, Reverse Recovery Time (trr): 165 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DOP3I-2 Insulated (Straight Leads), Packaging: Bulk.
Weitere Produktangebote BYT30PI1000
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BYT30PI-1000 Produktcode: 56264
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Lieblingsprodukt
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Hersteller : ST |
 Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelleGehäuse: DOP3I Vrr, V: 1000 V Iav, A: 70 A Trr, ns: 165 ns |
Produkt ist nicht verfügbar
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BYT30PI-1000 | Hersteller : STMicroelectronics |
Description: DIODE GEN PURP 1KV 30A DOP3I Current - Reverse Leakage @ Vr: 100 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Obsolete Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DOP3I Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 165 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DOP3I-2 Insulated (Straight Leads) Packaging: Bulk |
Produkt ist nicht verfügbar |
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| BYT30PI-1000 | Hersteller : STMicroelectronics |
Rectifiers |
Produkt ist nicht verfügbar |