Technische Details BYT30PI1000 ST
Description: DIODE GEN PURP 1KV 30A DOP3I, Packaging: Bulk, Package / Case: DOP3I-2 Insulated (Straight Leads), Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 165 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: DOP3I, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 30 A, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V.
Weitere Produktangebote BYT30PI1000
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BYT30PI-1000 Produktcode: 56264
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Lieblingsprodukt
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Hersteller : ST |
 Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelleGehäuse: DOP3I Vrr, V: 1000 V Iav, A: 70 A Trr, ns: 165 ns |
Produkt ist nicht verfügbar
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BYT30PI-1000 | Hersteller : STMicroelectronics |
Description: DIODE GEN PURP 1KV 30A DOP3I Packaging: Bulk Package / Case: DOP3I-2 Insulated (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 165 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: DOP3I Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
Produkt ist nicht verfügbar |
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| BYT30PI-1000 | Hersteller : STMicroelectronics |
Rectifiers |
Produkt ist nicht verfügbar |