
BYV32E-200PQ WeEn Semiconductors
auf Bestellung 2127 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 2.55 EUR |
10+ | 1.80 EUR |
100+ | 1.40 EUR |
500+ | 1.19 EUR |
1000+ | 0.97 EUR |
2000+ | 0.91 EUR |
5000+ | 0.87 EUR |
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Technische Details BYV32E-200PQ WeEn Semiconductors
Description: DIODE ARRAY GP 200V 10A TO-220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-220AB, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8, Voltage Coupled to Current - Reverse Leakage @ Vr: 200, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote BYV32E-200PQ
Foto | Bezeichnung | Hersteller | Beschreibung |
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BYV32E-200PQ | Hersteller : WeEn Semiconductor(Hong Kong)Co.,Limited |
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BYV32E-200PQ | Hersteller : Ween |
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Produkt ist nicht verfügbar |
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BYV32E-200PQ | Hersteller : WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 125A Case: SOT78; TO220AB Max. forward voltage: 0.85V Max. load current: 20A Heatsink thickness: 1.25...1.4mm Reverse recovery time: 18ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BYV32E-200PQ | Hersteller : WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8 Voltage Coupled to Current - Reverse Leakage @ Vr: 200 Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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BYV32E-200PQ | Hersteller : WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 125A Case: SOT78; TO220AB Max. forward voltage: 0.85V Max. load current: 20A Heatsink thickness: 1.25...1.4mm Reverse recovery time: 18ns |
Produkt ist nicht verfügbar |