BYV32E-200PQ WeEn Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.14 EUR |
| 10+ | 2.59 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.18 EUR |
| 2000+ | 1.09 EUR |
| 5000+ | 1.06 EUR |
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Technische Details BYV32E-200PQ WeEn Semiconductors
Description: DIODE ARRAY GP 200V 10A TO-220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-220AB, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8, Voltage Coupled to Current - Reverse Leakage @ Vr: 200, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote BYV32E-200PQ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BYV32E-200PQ | WeEn Semiconductor(Hong Kong)Co.,Limited |
 Diode Switching 200V 20A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BYV32E-200PQ | WeEn Semiconductors |
Description: DIODE ARRAY GP 200V 10A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8 Voltage Coupled to Current - Reverse Leakage @ Vr: 200 Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BYV32E-200PQ | WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 125A Case: SOT78; TO220AB Max. forward voltage: 0.85V Max. load current: 20A Heatsink thickness: 1.25...1.4mm Reverse recovery time: 18ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BYV32E-200PQ |
|
Hersteller: WeEn Semiconductor(Hong Kong)Co.,Limited
Diode Switching 200V 20A 3-Pin(3+Tab) TO-220AB Rail
Diode Switching 200V 20A 3-Pin(3+Tab) TO-220AB Rail
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV32E-200PQ |
|
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY GP 200V 10A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE ARRAY GP 200V 10A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYV32E-200PQ |
|
Hersteller: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 18ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH