
BYW32-TAP Vishay General Semiconductor - Diodes Division

Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5000+ | 0.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BYW32-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57, Packaging: Tape & Box (TB), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 200 ns, Technology: Avalanche, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-57, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote BYW32-TAP nach Preis ab 0.35 EUR bis 1.20 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
BYW32-TAP | Hersteller : Vishay |
![]() |
auf Bestellung 778 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BYW32-TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 2875 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BYW32-TAP | Hersteller : Vishay Semiconductors |
![]() |
auf Bestellung 2618 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BYW32-TAP | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
BYW32-TAP | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
BYW32-TAP | Hersteller : VISHAY |
![]() Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.1V Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
BYW32-TAP | Hersteller : VISHAY |
![]() Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.1V Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |