BZD27C11P-HE3-08 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.27 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.37 EUR |
| 2500+ | 0.33 EUR |
| 5000+ | 0.28 EUR |
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Technische Details BZD27C11P-HE3-08 Vishay Semiconductors
Description: DIODE ZENER 11V 800MW DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 175°C, Voltage - Zener (Nom) (Vz): 11 V, Impedance (Max) (Zzt): 7 Ohms, Supplier Device Package: DO-219AB (SMF), Grade: Automotive, Power - Max: 800 mW, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA, Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V, Qualification: AEC-Q101.
Weitere Produktangebote BZD27C11P-HE3-08
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BZD27C11P-HE3-08 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE ZENER 11V 800MW DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-219AB (SMF) Grade: Automotive Power - Max: 800 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V Qualification: AEC-Q101 |
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