Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > BZD27C4V3P-M-08
BZD27C4V3P-M-08

BZD27C4V3P-M-08 Vishay General Semiconductor - Diodes Division

BZD27-M_Series.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 800MW DO219AB
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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Technische Details BZD27C4V3P-M-08 Vishay General Semiconductor - Diodes Division

Description: DIODE ZENER 4.3V 800MW DO219AB, Current - Reverse Leakage @ Vr: 25 µA @ 1 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA, Power - Max: 800 mW, Supplier Device Package: DO-219AB (SMF), Impedance (Max) (Zzt): 7 Ohms, Voltage - Zener (Nom) (Vz): 4.3 V, Operating Temperature: -65°C ~ 175°C, Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).