BZT52B6V2-G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 410MW SOD123
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details BZT52B6V2-G Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 410MW SOD123, Current - Reverse Leakage @ Vr: 3 µA @ 4 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA, Power - Max: 410 mW, Supplier Device Package: SOD-123, Impedance (Max) (Zzt): 10 Ohms, Voltage - Zener (Nom) (Vz): 6.2 V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOD-123, Tolerance: ±2%, Packaging: Tape & Reel (TR).