BZX79C3V9 A0G

BZX79C3V9 A0G Taiwan Semiconductor Corporation


BZX79C2V0%20SERIES_H2304.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
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Technische Details BZX79C3V9 A0G Taiwan Semiconductor Corporation

Description: DIODE ZENER 3.9V 500MW DO35, Packaging: Tape & Box (TB), Current - Reverse Leakage @ Vr: 10 µA @ 1 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA, Power - Max: 500 mW, Supplier Device Package: DO-35, Impedance (Max) (Zzt): 90 Ohms, Voltage - Zener (Nom) (Vz): 3.9 V, Operating Temperature: -65°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Tolerance: ±5%.