C3M0015065K Wolfspeed, Inc.

Description: SICFET N-CH 650V 120A TO247-4L, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +15V, -4V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 3.6V @ 15.5mA, Power Dissipation (Max): 416W (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V.