Technische Details C3M0045065J1-TR Wolfspeed
Description: SIC, MOSFET 45M, 650V TO-263-7XL, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 4.84mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V.
Weitere Produktangebote C3M0045065J1-TR nach Preis ab 19.46 EUR bis 34.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| C3M0045065J1-TR | Wolfspeed, Inc. |
 Description: SIC, MOSFET 45M, 650V TO-263-7XLPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V |
auf Bestellung 678 Stücke: Lieferzeit 10-14 Tag (e) |
|
| C3M0045065J1-TR |
|
Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 34.27 EUR |
| 10+ | 24.56 EUR |
| 100+ | 19.46 EUR |