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C3M0045065J1-TR

C3M0045065J1-TR Wolfspeed

Hersteller: Wolfspeed
MOSFET SiC, MOSFET 45mohm, 650V TO-263-7XL, T&R, Industrial, Gen 3
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+32.19 EUR
10+ 28.37 EUR
25+ 27.6 EUR
50+ 26.07 EUR
100+ 24.53 EUR
250+ 23.76 EUR
500+ 22.23 EUR
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Technische Details C3M0045065J1-TR Wolfspeed

Description: SIC, MOSFET 45M, 650V TO-263-7XL, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 4.84mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V.

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C3M0045065J1-TR Hersteller : Wolfspeed c3m0045065j1.pdf Trans MOSFET N-CH SiC 650V 47A 8-Pin(7+Tab) TO-263 T/R
Produkt ist nicht verfügbar
C3M0045065J1-TR C3M0045065J1-TR Hersteller : Wolfspeed, Inc. Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
Produkt ist nicht verfügbar
C3M0045065J1-TR C3M0045065J1-TR Hersteller : Wolfspeed, Inc. Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
Produkt ist nicht verfügbar