| Anzahl | Preis |
|---|---|
| 1+ | 31.1 EUR |
| 10+ | 27.54 EUR |
| 25+ | 27.16 EUR |
| 50+ | 26.42 EUR |
| 100+ | 24.2 EUR |
| 250+ | 23.83 EUR |
| 500+ | 22.18 EUR |
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Technische Details C3M0065090J-TR Wolfspeed
Description: SICFET N-CH 900V 35A D2PAK-7, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 3.5V @ 5mA, Power Dissipation (Max): 113W (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V, Drain to Source Voltage (Vdss): 900 V.
Weitere Produktangebote C3M0065090J-TR nach Preis ab 21.63 EUR bis 32.63 EUR
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C3M0065090J-TR | Wolfspeed, Inc. |
 Description: SICFET N-CH 900V 35A D2PAK-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V |
auf Bestellung 638 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0065090J-TR |
|
Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
auf Bestellung 638 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 32.63 EUR |
| 10+ | 23.41 EUR |
| 100+ | 21.63 EUR |