auf Bestellung 2403 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 31.1 EUR |
| 10+ | 27.54 EUR |
| 25+ | 27.16 EUR |
| 50+ | 26.42 EUR |
| 100+ | 24.2 EUR |
| 250+ | 23.83 EUR |
| 500+ | 22.18 EUR |
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Technische Details C3M0065090J-TR Wolfspeed
Description: SICFET N-CH 900V 35A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V, Power Dissipation (Max): 113W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 5mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V.
Weitere Produktangebote C3M0065090J-TR nach Preis ab 11.05 EUR bis 32.4 EUR
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C3M0065090J-TR | Hersteller : Wolfspeed, Inc. |
 Description: SICFET N-CH 900V 35A D2PAK-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0065090J-TR | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 900V 35A 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 939 Stücke: Lieferzeit 14-21 Tag (e) |
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| C3M0065090J-TR | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 900V 35A 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 939 Stücke: Lieferzeit 14-21 Tag (e) |
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| C3M0065090J-TR | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 900V 35A 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| C3M0065090J-TR | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 900V 35A Automotive 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 693 Stücke: Lieferzeit 14-21 Tag (e) |
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| C3M0065090J-TR | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 900V 35A 8-Pin(7+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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C3M0065090J-TR | Hersteller : Wolfspeed, Inc. |
Description: SICFET N-CH 900V 35A D2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V |
Produkt ist nicht verfügbar |
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C3M0065090J-TR | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Technology: C3M™; SiC Case: D2PAK-7 Kind of channel: enhancement Mounting: SMD Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -8...19V Reverse recovery time: 16ns Gate charge: 30.4nC On-state resistance: 78mΩ Power dissipation: 113W Drain current: 35A Drain-source voltage: 900V |
Produkt ist nicht verfügbar |