C3M0120065L-TR Wolfspeed
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.96 EUR |
| 10+ | 13.67 EUR |
| 25+ | 12.4 EUR |
| 100+ | 11.39 EUR |
| 250+ | 10.72 EUR |
| 500+ | 10.06 EUR |
| 1000+ | 9.04 EUR |
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Technische Details C3M0120065L-TR Wolfspeed
Description: SIC, MOSFET, 120M, 650V, TOLL, I, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TOLL, Vgs(th) (Max) @ Id: 3.6V @ 1.86mA, Power Dissipation (Max): 86W (Tc), Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote C3M0120065L-TR nach Preis ab 9.44 EUR bis 17.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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C3M0120065L-TR | Wolfspeed, Inc. |
 Description: SIC, MOSFET, 120M, 650V, TOLL, IDrain to Source Voltage (Vdss): 650 V Vgs (Max): +19V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TOLL Vgs(th) (Max) @ Id: 3.6V @ 1.86mA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V |
auf Bestellung 1950 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0120065L-TR |
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Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 120M, 650V, TOLL, I
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
Description: SIC, MOSFET, 120M, 650V, TOLL, I
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.93 EUR |
| 10+ | 12.29 EUR |
| 100+ | 9.44 EUR |