C3M0120100J-TR Wolfspeed, Inc.
Hersteller: Wolfspeed, Inc.Description: SIC, MOSFET, 120M, 1000V, TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 29.11 EUR |
| 10+ | 20.5 EUR |
| 25+ | 18.26 EUR |
| 100+ | 16.09 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details C3M0120100J-TR Wolfspeed, Inc.
Description: SIC, MOSFET, 120M, 1000V, TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V.
Weitere Produktangebote C3M0120100J-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| C3M0120100J-TR | Hersteller : Wolfspeed |
C3M0120100J-TR |
Produkt ist nicht verfügbar |
||
|
|
C3M0120100J-TR | Hersteller : Wolfspeed, Inc. |
Description: SIC, MOSFET, 120M, 1000V, TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V |
Produkt ist nicht verfügbar |