| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.26 EUR |
| 10+ | 23.15 EUR |
| 25+ | 22.97 EUR |
| 50+ | 22.59 EUR |
| 100+ | 19.98 EUR |
| 250+ | 19.81 EUR |
| 500+ | 18.12 EUR |
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Technische Details C3M0120100J MACOM
Description: SICFET N-CH 1000V 22A D2PAK-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3mA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V.
Weitere Produktangebote C3M0120100J nach Preis ab 18.02 EUR bis 35.19 EUR
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C3M0120100J | Wolfspeed |
 SiC MOSFETs 1000V 120mOhm G3 SiC MOSFET TO-263-7 |
auf Bestellung 338 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0120100J | Wolfspeed, Inc. |
Description: SICFET N-CH 1000V 22A D2PAK-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V |
auf Bestellung 844 Stücke: Lieferzeit 10-14 Tag (e) |
|
| C3M0120100J |
|
Hersteller: Wolfspeed
SiC MOSFETs 1000V 120mOhm G3 SiC MOSFET TO-263-7
SiC MOSFETs 1000V 120mOhm G3 SiC MOSFET TO-263-7
auf Bestellung 338 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.93 EUR |
| 10+ | 25.57 EUR |
| 25+ | 24.88 EUR |
| 50+ | 23.41 EUR |
| 100+ | 22.03 EUR |
| 250+ | 21.35 EUR |
| 500+ | 19.97 EUR |
| C3M0120100J |
|
Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 1000V 22A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
Description: SICFET N-CH 1000V 22A D2PAK-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
auf Bestellung 844 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 35.19 EUR |
| 10+ | 25.03 EUR |
| 50+ | 20.71 EUR |
| 100+ | 19.31 EUR |
| 500+ | 18.02 EUR |