C3M0120100J Wolfspeed(CREE)
Hersteller: Wolfspeed(CREE)Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 83W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: C3M™; SiC
Reverse recovery time: 16ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 12.46 EUR |
| 7+ | 11.78 EUR |
| 30+ | 11.31 EUR |
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Technische Details C3M0120100J Wolfspeed(CREE)
Description: SICFET N-CH 1000V 22A D2PAK-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3mA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V.
Weitere Produktangebote C3M0120100J nach Preis ab 11.78 EUR bis 30.08 EUR
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C3M0120100J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 83W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 21.5nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: C3M™; SiC Reverse recovery time: 16ns |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0120100J | Hersteller : Wolfspeed, Inc. |
Description: SICFET N-CH 1000V 22A D2PAK-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V |
auf Bestellung 1015 Stücke: Lieferzeit 10-14 Tag (e) |
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