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C3M0160120J-TR

C3M0160120J-TR Wolfspeed, Inc.


Wolfspeed_C3M0160120J_data_sheet.pdf Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 160M, 1200V, TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
auf Bestellung 450 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.47 EUR
10+13.52 EUR
100+10.17 EUR
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Technische Details C3M0160120J-TR Wolfspeed, Inc.

Description: SIC, MOSFET, 160M, 1200V, TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 2.33mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V.

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C3M0160120J-TR Hersteller : Wolfspeed c3m0160120j.pdf C3M0160120J-TR
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C3M0160120J-TR C3M0160120J-TR Hersteller : Wolfspeed, Inc. Wolfspeed_C3M0160120J_data_sheet.pdf Description: SIC, MOSFET, 160M, 1200V, TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C3M0160120J-TR C3M0160120J-TR Hersteller : Wolfspeed C3M0160120J-2935246.pdf MOSFET SiC, MOSFET, 160mohm, 1200V, TO-263-7 T&R, Industrial, Gen 3
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