C3M0350120J Wolfspeed, Inc.
Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 7.2A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
Description: SICFET N-CH 1200V 7.2A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
auf Bestellung 624 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.02 EUR |
50+ | 12.01 EUR |
100+ | 10.74 EUR |
500+ | 9.48 EUR |
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Technische Details C3M0350120J Wolfspeed, Inc.
Description: SICFET N-CH 1200V 7.2A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V, Power Dissipation (Max): 40.8W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V.
Weitere Produktangebote C3M0350120J nach Preis ab 9.67 EUR bis 15.96 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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C3M0350120J | Hersteller : Wolfspeed | MOSFET SiC, MOSFET, 350mO,1200V, TO-263-7, Industrial |
auf Bestellung 601 Stücke: Lieferzeit 14-28 Tag (e) |
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C3M0350120J | Hersteller : Wolfspeed | Trans MOSFET N-CH SiC 1.2KV 7.2A 8-Pin(7+Tab) D2PAK |
Produkt ist nicht verfügbar |
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C3M0350120J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W Mounting: SMD Case: D2PAK-7 Drain-source voltage: 1.2kV Drain current: 5A On-state resistance: 525mΩ Type of transistor: N-MOSFET Power dissipation: 40.8W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 13nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Pulsed drain current: 20A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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C3M0350120J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W Mounting: SMD Case: D2PAK-7 Drain-source voltage: 1.2kV Drain current: 5A On-state resistance: 525mΩ Type of transistor: N-MOSFET Power dissipation: 40.8W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 13nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Pulsed drain current: 20A |
Produkt ist nicht verfügbar |