C3M0350120J Wolfspeed
| Anzahl | Privatkunde |
|---|---|
| 30+ | 5.95 EUR |
| 31+ | 5.52 EUR |
| 50+ | 5.16 EUR |
| 100+ | 4.55 EUR |
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Technische Details C3M0350120J Wolfspeed
Description: SICFET N-CH 1200V 7.2A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V, Power Dissipation (Max): 40.8W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V.
Weitere Produktangebote C3M0350120J nach Preis ab 4.19 EUR bis 13.45 EUR
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C3M0350120J | Wolfspeed |
 Trans MOSFET N-CH SiC 1.2KV 7.2A 8-Pin(7+Tab) D2PAK Tube |
auf Bestellung 957 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0350120J | Wolfspeed |
Trans MOSFET N-CH SiC 1.2KV 7.2A 8-Pin(7+Tab) D2PAK Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0350120J | Wolfspeed |
Trans MOSFET N-CH SiC 1.2KV 7.2A 8-Pin(7+Tab) D2PAK Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0350120J | Wolfspeed |
SiC MOSFETs SiC, MOSFET, 350mO,1200V, TO-263-7, Industrial |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0350120J | Wolfspeed, Inc. |
Description: SICFET N-CH 1200V 7.2A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V Power Dissipation (Max): 40.8W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V |
auf Bestellung 550 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0350120J |
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Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 1.2KV 7.2A 8-Pin(7+Tab) D2PAK Tube
Trans MOSFET N-CH SiC 1.2KV 7.2A 8-Pin(7+Tab) D2PAK Tube
auf Bestellung 957 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 5.95 EUR |
| 31+ | 5.32 EUR |
| 50+ | 4.89 EUR |
| 100+ | 4.19 EUR |
| C3M0350120J |
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Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 1.2KV 7.2A 8-Pin(7+Tab) D2PAK Tube
Trans MOSFET N-CH SiC 1.2KV 7.2A 8-Pin(7+Tab) D2PAK Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 8.97 EUR |
| 100+ | 8.06 EUR |
| 250+ | 7.81 EUR |
| 500+ | 6.6 EUR |
| 1000+ | 5.93 EUR |
| C3M0350120J |
|
Hersteller: Wolfspeed
Trans MOSFET N-CH SiC 1.2KV 7.2A 8-Pin(7+Tab) D2PAK Tube
Trans MOSFET N-CH SiC 1.2KV 7.2A 8-Pin(7+Tab) D2PAK Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 8.97 EUR |
| 100+ | 7.88 EUR |
| 250+ | 7.52 EUR |
| 500+ | 6.26 EUR |
| 1000+ | 5.46 EUR |
| C3M0350120J |
|
Hersteller: Wolfspeed
SiC MOSFETs SiC, MOSFET, 350mO,1200V, TO-263-7, Industrial
SiC MOSFETs SiC, MOSFET, 350mO,1200V, TO-263-7, Industrial
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.52 EUR |
| 10+ | 6.09 EUR |
| 100+ | 5.55 EUR |
| 500+ | 4.8 EUR |
| C3M0350120J |
|
Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 7.2A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
Description: SICFET N-CH 1200V 7.2A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V
Power Dissipation (Max): 40.8W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.45 EUR |
| 50+ | 7.21 EUR |
| 100+ | 6.6 EUR |
| 500+ | 5.56 EUR |