CAB006A12GM3T MACOM
Hersteller: MACOMDiscrete Semiconductor Modules SiC, Module, 6mohm, 1200V, 48 mm, AIN GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 602.98 EUR |
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Technische Details CAB006A12GM3T MACOM
Description: MOSFET 2N-CH 1200V 200A MODULE, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 200A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V, Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V, Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V, Vgs(th) (Max) @ Id: 3.6V @ 69mA, Supplier Device Package: Module.
Weitere Produktangebote CAB006A12GM3T nach Preis ab 602.98 EUR bis 602.98 EUR
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CAB006A12GM3T | Hersteller : Wolfspeed |
Discrete Semiconductor Modules SiC, Module, 6mohm, 1200V, 48 mm, AIN GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB006A12GM3T | Hersteller : Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 200A MODULE Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 69mA Supplier Device Package: Module |
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