CAB011A12GM3T Wolfspeed
Hersteller: Wolfspeed
MOSFET Modules SiC, Module, 11m, 1200V, 48 mm, AlN GM3, Half-Bridge, Industrial, Pre-Applied TIM
| Anzahl | Privatkunde |
|---|---|
| 1+ | 273 EUR |
| 10+ | 242.81 EUR |
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10-14 Tag (e)
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Technische Details CAB011A12GM3T Wolfspeed
Description: MOSFET 2N-CH 1200V 141A MODULE, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 10mW, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 141A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V, Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V, Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V, Vgs(th) (Max) @ Id: 3.9V @ 34mA, Supplier Device Package: Module.
Weitere Produktangebote CAB011A12GM3T nach Preis ab 282.7 EUR bis 282.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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CAB011A12GM3T | Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 141A MODULE Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 10mW Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 141A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V Vgs(th) (Max) @ Id: 3.9V @ 34mA Supplier Device Package: Module |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| CAB011A12GM3T |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
Description: MOSFET 2N-CH 1200V 141A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 10mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Supplier Device Package: Module
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 282.7 EUR |