CAB760M12HM3 Wolfspeed
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4582.64 EUR |
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Technische Details CAB760M12HM3 Wolfspeed
Description: SIC 2N-CH 1200V 1015A MODULE, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 1015A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V, Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V, Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V, Vgs(th) (Max) @ Id: 3.6V @ 280mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote CAB760M12HM3 nach Preis ab 4955.66 EUR bis 5399.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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CAB760M12HM3 | MACOM |
 Discrete Semiconductor Modules SiC, Module, 760A, 1200V, 62mm, HM3, Half-Bridge, Industrial, Gen 3 |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB760M12HM3 | Wolfspeed, Inc. |
Description: SIC 2N-CH 1200V 1015A MODULE Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 1015A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 280mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CAB760M12HM3 |
|
Hersteller: MACOM
Discrete Semiconductor Modules SiC, Module, 760A, 1200V, 62mm, HM3, Half-Bridge, Industrial, Gen 3
Discrete Semiconductor Modules SiC, Module, 760A, 1200V, 62mm, HM3, Half-Bridge, Industrial, Gen 3
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4955.66 EUR |
| CAB760M12HM3 |
|
Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 1015A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
Description: SIC 2N-CH 1200V 1015A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5399.53 EUR |