Technische Details CAB760M12HM3 Wolfspeed
Description: SIC 2N-CH 1200V 1015A MODULE, Part Status: Active, Supplier Device Package: Module, Vgs(th) (Max) @ Id: 3.6V @ 280mA, Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V, Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 1015A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Box, Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V.
Weitere Produktangebote CAB760M12HM3 nach Preis ab 5399.53 EUR bis 5568.15 EUR
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CAB760M12HM3 | Wolfspeed, Inc. |
 Description: SIC 2N-CH 1200V 1015A MODULEPart Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 280mA Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V Current - Continuous Drain (Id) @ 25°C: 1015A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V |
auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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CAB760M12HM3 | MACOM |
Discrete Semiconductor Modules SiC, Module, 760A, 1200V, 62mm, HM3, Half-Bridge, Industrial, Gen 3 |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| CAB760M12HM3 |
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Hersteller: Wolfspeed, Inc.
Description: SIC 2N-CH 1200V 1015A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
Description: SIC 2N-CH 1200V 1015A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 3.6V @ 280mA
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 760A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 79400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 1015A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Gate Charge (Qg) (Max) @ Vgs: 2724nC @ 15V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5399.53 EUR |
| CAB760M12HM3 |
|
Hersteller: MACOM
Discrete Semiconductor Modules SiC, Module, 760A, 1200V, 62mm, HM3, Half-Bridge, Industrial, Gen 3
Discrete Semiconductor Modules SiC, Module, 760A, 1200V, 62mm, HM3, Half-Bridge, Industrial, Gen 3
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5568.15 EUR |