Technische Details CBB032M12FM3 Wolfspeed
Description: MOSFET 4N-CH 1200V 40A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 40A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V, Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V, Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V, Vgs(th) (Max) @ Id: 3.6V @ 11.5mA.
Weitere Produktangebote CBB032M12FM3 nach Preis ab 202.18 EUR bis 234.85 EUR
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CBB032M12FM3 | Wolfspeed, Inc. |
 Description: MOSFET 4N-CH 1200V 40APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA |
auf Bestellung 54 Stücke: Lieferzeit 10-14 Tag (e) |
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CBB032M12FM3 | MACOM |
Discrete Semiconductor Modules 1200V, 50A, SiC Six pack Module GEN 3 |
auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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| CBB032M12FM3 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFET 4N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Description: MOSFET 4N-CH 1200V 40A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 230.54 EUR |
| 18+ | 202.18 EUR |
| CBB032M12FM3 |
|
Hersteller: MACOM
Discrete Semiconductor Modules 1200V, 50A, SiC Six pack Module GEN 3
Discrete Semiconductor Modules 1200V, 50A, SiC Six pack Module GEN 3
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 234.85 EUR |
| 10+ | 224.36 EUR |
| 18+ | 220.3 EUR |