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CDBD2SC21200-G

CDBD2SC21200-G Comchip Technology

CDBD2SC21200-G493563.pdf Hersteller: Comchip Technology
Description: DIODE SIL CARB 1.2KV 6.2A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 136pF @ 0V, 1MHz
Current - Average Rectified (Io): 6.2A
Supplier Device Package: TO-263 (D²Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 592 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.32 EUR
10+ 6.99 EUR
100+ 5.65 EUR
500+ 5.03 EUR
Mindestbestellmenge: 4
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Technische Details CDBD2SC21200-G Comchip Technology

Description: DIODE SIL CARB 1.2KV 6.2A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 136pF @ 0V, 1MHz, Current - Average Rectified (Io): 6.2A, Supplier Device Package: TO-263 (D²Pak), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.

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CDBD2SC21200-G CDBD2SC21200-G Hersteller : Comchip Technology CDBD2SC21200_G493563-2505030.pdf Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 2A 1200V
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