CDBJFSC101200-G Comchip Technology
Hersteller: Comchip TechnologyDescription: DIODE SIL CARB 1.2KV 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 560 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 30.91 EUR |
| 50+ | 25.03 EUR |
| 100+ | 23.56 EUR |
| 500+ | 21.35 EUR |
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Technische Details CDBJFSC101200-G Comchip Technology
Description: DIODE SIL CARB 1.2KV 10A TO220F, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 780pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220F, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote CDBJFSC101200-G nach Preis ab 19.71 EUR bis 31.15 EUR
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CDBJFSC101200-G | Hersteller : Comchip Technology |
Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 10A 1200V |
auf Bestellung 143 Stücke: Lieferzeit 14-28 Tag (e) |
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