CDBJFSC101200-G Comchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.09 EUR |
| 10+ | 22.3 EUR |
| 50+ | 16.56 EUR |
| 1000+ | 15.87 EUR |
| 2500+ | 15.4 EUR |
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Technische Details CDBJFSC101200-G Comchip Technology
Description: DIODE SIL CARB 1200V 10A TO220F, Supplier Device Package: TO-220F, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 780pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Tube, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C.
Weitere Produktangebote CDBJFSC101200-G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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CDBJFSC101200-G | Comchip Technology |
 Description: DIODE SIL CARB 1200V 10A TO220FSupplier Device Package: TO-220F Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 780pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CDBJFSC101200-G |
|
Hersteller: Comchip Technology
Description: DIODE SIL CARB 1200V 10A TO220F
Supplier Device Package: TO-220F
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 780pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Description: DIODE SIL CARB 1200V 10A TO220F
Supplier Device Package: TO-220F
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 780pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH