CDBJFSC8650-G Comchip Technology
Hersteller: Comchip TechnologyDescription: DIODE SIL CARBIDE 650V 8A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 479 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.34 EUR |
| 10+ | 6.17 EUR |
| 100+ | 4.99 EUR |
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Technische Details CDBJFSC8650-G Comchip Technology
Description: DIODE SIL CARBIDE 650V 8A TO220F, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 560pF @ 0V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220F, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote CDBJFSC8650-G nach Preis ab 3.59 EUR bis 7.39 EUR
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CDBJFSC8650-G | Hersteller : Comchip Technology |
Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 8A 650V |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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