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CDF56G6511N TR13 PBFREE

CDF56G6511N TR13 PBFREE Central Semiconductor

CDF56G6511N-3366824.pdf Hersteller: Central Semiconductor
GaN FETs 650V, 11A, N-Channel GaN FET
auf Bestellung 2336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.87 EUR
10+6.39 EUR
25+6.37 EUR
100+5.03 EUR
500+4.52 EUR
1000+3.91 EUR
2500+3.80 EUR
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Technische Details CDF56G6511N TR13 PBFREE Central Semiconductor

Description: 650V, 11A, N-CHANNEL GAN FET IN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V, Power Dissipation (Max): 1.1W (Ta), 84W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 12.2mA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -1.4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V.

Weitere Produktangebote CDF56G6511N TR13 PBFREE nach Preis ab 3.67 EUR bis 8.08 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CDF56G6511N TR13 PBFREE CDF56G6511N TR13 PBFREE Hersteller : Central Semiconductor Corp CDF56G6511N.PDF Description: 650V, 11A, N-CHANNEL GAN FET IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 1.1W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
auf Bestellung 2302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.08 EUR
10+6.40 EUR
100+4.60 EUR
500+4.17 EUR
1000+3.67 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CDF56G6511N TR13 PBFREE CDF56G6511N TR13 PBFREE Hersteller : Central Semiconductor Corp CDF56G6511N.PDF Description: 650V, 11A, N-CHANNEL GAN FET IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 1.1W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH