CDM2206-800LR SL PBFREE Central Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.99 EUR |
| 10+ | 3.19 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.65 EUR |
| 2500+ | 1.56 EUR |
| 5000+ | 1.49 EUR |
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Technische Details CDM2206-800LR SL PBFREE Central Semiconductor
Description: MOSFET N-CH 800V 6A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V.
Weitere Produktangebote CDM2206-800LR SL PBFREE
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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CDM2206-800LR SL PBFREE | Central Semiconductor Corp |
 Description: MOSFET N-CH 800V 6A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 850 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CDM2206-800LR SL PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 850 Stücke
Im Einkaufswagen
Stück im Wert von UAH