CDM4-600LR TR13 PBFREE Central Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.77 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.13 EUR |
| 2500+ | 0.96 EUR |
| 10000+ | 0.93 EUR |
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Technische Details CDM4-600LR TR13 PBFREE Central Semiconductor
Description: MOSFET N-CH 600V 4A DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 38W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.59 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): 30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK.
Weitere Produktangebote CDM4-600LR TR13 PBFREE
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| CDM4-600LR TR13 PBFREE | Central Semiconductor Corp |
Description: MOSFET N-CH 600V 4A DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11.59 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): 30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CDM4-600LR TR13 PBFREE |
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 600V 4A DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.59 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Description: MOSFET N-CH 600V 4A DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.59 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH

