CDMSJ22013.8-650 SL Central Semiconductor Corp
Hersteller: Central Semiconductor CorpDescription: SUPER JUNCTION MOSFETS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 400 V
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.86 EUR |
| 50+ | 3.85 EUR |
| 100+ | 3.3 EUR |
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Technische Details CDMSJ22013.8-650 SL Central Semiconductor Corp
Description: SUPER JUNCTION MOSFETS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V, Power Dissipation (Max): 35.7W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 400 V.
Weitere Produktangebote CDMSJ22013.8-650 SL nach Preis ab 2.52 EUR bis 4.89 EUR
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CDMSJ22013.8-650 SL | Hersteller : Central Semiconductor |
MOSFETs 13.8A,650V Through-Hole MOSFET N-Channel Super Junction T/L |
auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
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