CDN1308EDL CDIL
Hersteller: CDILCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.1A; Idm: 6A; 0.3W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.1A
Pulsed drain current: 6A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 25 Stücke
auf Bestellung 7670 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 925+ | 0.078 EUR |
| 1025+ | 0.07 EUR |
| 1400+ | 0.051 EUR |
| 1500+ | 0.048 EUR |
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Technische Details CDN1308EDL CDIL
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 1.1A; Idm: 6A; 0.3W; SOT323, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 1.1A, Pulsed drain current: 6A, Power dissipation: 0.3W, Case: SOT323, Gate-source voltage: ±12V, On-state resistance: 0.185Ω, Mounting: SMD, Gate charge: 1.4nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 25 Stücke.
Weitere Produktangebote CDN1308EDL nach Preis ab 0.048 EUR bis 0.078 EUR
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CDN1308EDL | Hersteller : CDIL |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.1A; Idm: 6A; 0.3W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.1A Pulsed drain current: 6A Power dissipation: 0.3W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 7670 Stücke: Lieferzeit 14-21 Tag (e) |
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