CGD65B200S2-T13 Cambridge GaN Devices
Hersteller: Cambridge GaN DevicesDescription: 650V GAN HEMT, 200MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
auf Bestellung 4159 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.08 EUR |
| 10+ | 6.05 EUR |
| 100+ | 4.34 EUR |
| 500+ | 3.61 EUR |
| 1000+ | 3.45 EUR |
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Technische Details CGD65B200S2-T13 Cambridge GaN Devices
Description: 650V GAN HEMT, 200MOHM, DFN5X6., Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V, FET Feature: Current Sensing, Vgs(th) (Max) @ Id: 4.2V @ 2.75mA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 9V, 20V, Vgs (Max): +20V, -1V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V.
Weitere Produktangebote CGD65B200S2-T13
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CGD65B200S2-T13 | Hersteller : Cambridge GaN Devices |
Description: 650V GAN HEMT, 200MOHM, DFN5X6. Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V FET Feature: Current Sensing Vgs(th) (Max) @ Id: 4.2V @ 2.75mA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 9V, 20V Vgs (Max): +20V, -1V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V |
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