CIG21L1R2MNE SAMSUNGEM
Hersteller: SAMSUNGEMInductor Power Chip Shielded Multi-Layer 1.2uH 20% 1MHz Ferrite 1.1A 0.125Ohm DCR 0805 T/R
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Technische Details CIG21L1R2MNE SAMSUNGEM
Description: FIXED IND 1.2UH 1.1A 125MOHM SMD, Packaging: Tape & Reel (TR), Tolerance: ±20%, Package / Case: 0805 (2012 Metric), Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm), Mounting Type: Surface Mount, Shielding: Shielded, Type: Multilayer, Operating Temperature: -40°C ~ 125°C, DC Resistance (DCR): 125mOhm, Inductance Frequency - Test: 1 MHz, Inductance: 1.2 µH, Current Rating (Amps): 1.1 A.
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CIG21L1R2MNE | Hersteller : Samsung Electro-Mechanics |
Description: FIXED IND 1.2UH 1.1A 125MOHM SMD Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Shielding: Shielded Type: Multilayer Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 125mOhm Inductance Frequency - Test: 1 MHz Inductance: 1.2 µH Current Rating (Amps): 1.1 A |
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CIG21L1R2MNE | Hersteller : Samsung Electro-Mechanics |
Description: FIXED IND 1.2UH 1.1A 125MOHM SMD Packaging: Cut Tape (CT) Tolerance: ±20% Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Shielding: Shielded Type: Multilayer Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 125mOhm Inductance Frequency - Test: 1 MHz Inductance: 1.2 µH Current Rating (Amps): 1.1 A |
Produkt ist nicht verfügbar |