CIG21L1R2MNE SAMSUNGEM
Hersteller: SAMSUNGEMInductor Power Chip Shielded Multi-Layer 1.2uH 20% 1MHz Ferrite 1.1A 0.125Ohm DCR 0805 T/R
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details CIG21L1R2MNE SAMSUNGEM
Description: FIXED IND 1.2UH 1.1A 125MOHM SMD, Tolerance: ±20%, Packaging: Tape & Reel (TR), Package / Case: 0805 (2012 Metric), Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm), Mounting Type: Surface Mount, Shielding: Shielded, Type: Multilayer, Operating Temperature: -40°C ~ 125°C, DC Resistance (DCR): 125mOhm, Inductance Frequency - Test: 1 MHz, Inductance: 1.2 µH, Current Rating (Amps): 1.1 A.
Weitere Produktangebote CIG21L1R2MNE
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
-2,00x1.25x,80mm.jpg "CIG21L1R2MNE") |
CIG21L1R2MNE | Hersteller : Samsung Electro-Mechanics |
Description: FIXED IND 1.2UH 1.1A 125MOHM SMD Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Shielding: Shielded Type: Multilayer Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 125mOhm Inductance Frequency - Test: 1 MHz Inductance: 1.2 µH Current Rating (Amps): 1.1 A |
Produkt ist nicht verfügbar |
|
|
|
CIG21L1R2MNE | Hersteller : Samsung Electro-Mechanics |
Description: FIXED IND 1.2UH 1.1A 125MOHM SMD Packaging: Cut Tape (CT) Tolerance: ±20% Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Shielding: Shielded Type: Multilayer Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 125mOhm Inductance Frequency - Test: 1 MHz Inductance: 1.2 µH Current Rating (Amps): 1.1 A |
Produkt ist nicht verfügbar |