CIGT252010EH2R2MNE Samsung Electro-Mechanics
Hersteller: Samsung Electro-MechanicsRF Inductors - SMD CIGT,Thin Film,1008,2.2uH,1.0?,7 embossed,-20 20%
auf Bestellung 35431 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.42 EUR |
| 11+ | 0.27 EUR |
| 100+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.16 EUR |
| 9000+ | 0.14 EUR |
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Technische Details CIGT252010EH2R2MNE Samsung Electro-Mechanics
Description: FIXED IND 2.2UH 2.4A 80MOHM SMD, Packaging: Tape & Reel (TR), Tolerance: ±20%, Package / Case: 1008 (2520 Metric), Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm), Mounting Type: Surface Mount, Shielding: Shielded, Type: Thin Film, Operating Temperature: -40°C ~ 125°C, DC Resistance (DCR): 80mOhm Max, Current - Saturation (Isat): 2.7A, Material - Core: Metal Composite, Inductance Frequency - Test: 1 MHz, Supplier Device Package: 1008 (2520 Metric), Height - Seated (Max): 0.039" (1.00mm), Part Status: Active, Inductance: 2.2 µH, Current Rating (Amps): 2.4 A.
Weitere Produktangebote CIGT252010EH2R2MNE
| Foto | Bezeichnung | Hersteller | Beschreibung |
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CIGT252010EH2R2MNE | Hersteller : Samsung Electro-Mechanics |
Description: FIXED IND 2.2UH 2.4A 80MOHM SMD Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Thin Film Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 80mOhm Max Current - Saturation (Isat): 2.7A Material - Core: Metal Composite Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 (2520 Metric) Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Inductance: 2.2 µH Current Rating (Amps): 2.4 A |
Produkt ist nicht verfügbar |
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CIGT252010EH2R2MNE | Hersteller : Samsung Electro-Mechanics |
Description: FIXED IND 2.2UH 2.4A 80MOHM SMD Packaging: Cut Tape (CT) Tolerance: ±20% Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Thin Film Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 80mOhm Max Current - Saturation (Isat): 2.7A Material - Core: Metal Composite Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 (2520 Metric) Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Inductance: 2.2 µH Current Rating (Amps): 2.4 A |
Produkt ist nicht verfügbar |