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CIGW252010GL1R0MNE

CIGW252010GL1R0MNE Samsung Electro-Mechanics


CIGW252010GL1R0MNE_Spec.pdf Hersteller: Samsung Electro-Mechanics
Description: FIXED IND 1UH 3.3A 40 MOHM SMD
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: 1008 (2520 Metric)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Drum Core, Wirewound
Operating Temperature: -40°C ~ 125°C
DC Resistance (DCR): 40mOhm Max
Current - Saturation (Isat): 3.7A
Material - Core: Metal Composite
Inductance Frequency - Test: 1 MHz
Supplier Device Package: 1008 (2520 Metric)
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Inductance: 1 µH
Current Rating (Amps): 3.3 A
auf Bestellung 54000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.26 EUR
6000+ 0.25 EUR
30000+ 0.24 EUR
Mindestbestellmenge: 3000
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Technische Details CIGW252010GL1R0MNE Samsung Electro-Mechanics

Description: FIXED IND 1UH 3.3A 40 MOHM SMD, Packaging: Tape & Reel (TR), Tolerance: ±20%, Package / Case: 1008 (2520 Metric), Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm), Mounting Type: Surface Mount, Shielding: Shielded, Type: Drum Core, Wirewound, Operating Temperature: -40°C ~ 125°C, DC Resistance (DCR): 40mOhm Max, Current - Saturation (Isat): 3.7A, Material - Core: Metal Composite, Inductance Frequency - Test: 1 MHz, Supplier Device Package: 1008 (2520 Metric), Height - Seated (Max): 0.039" (1.00mm), Part Status: Active, Inductance: 1 µH, Current Rating (Amps): 3.3 A.

Weitere Produktangebote CIGW252010GL1R0MNE nach Preis ab 0.25 EUR bis 0.87 EUR

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Preis ohne MwSt
CIGW252010GL1R0MNE CIGW252010GL1R0MNE Hersteller : Samsung Electro-Mechanics CIGW252010GL1R0MNE_Spec.pdf Description: FIXED IND 1UH 3.3A 40 MOHM SMD
Packaging: Cut Tape (CT)
Tolerance: ±20%
Package / Case: 1008 (2520 Metric)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Drum Core, Wirewound
Operating Temperature: -40°C ~ 125°C
DC Resistance (DCR): 40mOhm Max
Current - Saturation (Isat): 3.7A
Material - Core: Metal Composite
Inductance Frequency - Test: 1 MHz
Supplier Device Package: 1008 (2520 Metric)
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Inductance: 1 µH
Current Rating (Amps): 3.3 A
auf Bestellung 56473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
37+ 0.48 EUR
40+ 0.45 EUR
50+ 0.41 EUR
100+ 0.36 EUR
250+ 0.35 EUR
500+ 0.31 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 30
CIGW252010GL1R0MNE CIGW252010GL1R0MNE Hersteller : Samsung Electro-Mechanics sems_s_a0002828018_1-2288866.pdf Power Inductors - SMD CIGW,Wire wound,1008,1.0uH,1.0?,7 embossed,-20 20%
auf Bestellung 1855 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
60+0.87 EUR
87+ 0.6 EUR
113+ 0.46 EUR
1000+ 0.37 EUR
3000+ 0.34 EUR
9000+ 0.33 EUR
24000+ 0.32 EUR
Mindestbestellmenge: 60
CIGW252010GL1R0MNE CIGW252010GL1R0MNE Hersteller : SAMSUNGEM cigw252010gl1r0mne.pdf Inductor Power Wirewound 1uH 20% 1MHz Metal 3.3A 0.04Ohm DCR 1008 T/R
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