CIGW252010GL2R2MNE Samsung Electro-Mechanics
                                                Hersteller: Samsung Electro-MechanicsDescription: FIXED IND 2.2UH 2.2A 93MOHM SMD
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 1008 (2520 Metric)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Shielding: Shielded
Type: Drum Core, Wirewound
Operating Temperature: -40°C ~ 125°C
DC Resistance (DCR): 93mOhm Max
Current - Saturation (Isat): 2.6A
Material - Core: Metal Composite
Inductance Frequency - Test: 1 MHz
Supplier Device Package: 1008 (2520 Metric)
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Inductance: 2.2 µH
Current Rating (Amps): 2.2 A
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 3000+ | 0.092 EUR | 
| 6000+ | 0.087 EUR | 
| 9000+ | 0.084 EUR | 
| 15000+ | 0.081 EUR | 
| 21000+ | 0.078 EUR | 
| 30000+ | 0.076 EUR | 
| 75000+ | 0.07 EUR | 
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Technische Details CIGW252010GL2R2MNE Samsung Electro-Mechanics
Description: FIXED IND 2.2UH 2.2A 93MOHM SMD, Tolerance: ±20%, Packaging: Tape & Reel (TR), Package / Case: 1008 (2520 Metric), Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm), Mounting Type: Surface Mount, Shielding: Shielded, Type: Drum Core, Wirewound, Operating Temperature: -40°C ~ 125°C, DC Resistance (DCR): 93mOhm Max, Current - Saturation (Isat): 2.6A, Material - Core: Metal Composite, Inductance Frequency - Test: 1 MHz, Supplier Device Package: 1008 (2520 Metric), Height - Seated (Max): 0.039" (1.00mm), Part Status: Active, Inductance: 2.2 µH, Current Rating (Amps): 2.2 A. 
Weitere Produktangebote CIGW252010GL2R2MNE nach Preis ab 0.086 EUR bis 0.18 EUR
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        CIGW252010GL2R2MNE | Hersteller : Samsung Electro-Mechanics | 
            
                         Description: FIXED IND 2.2UH 2.2A 93MOHM SMDTolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Drum Core, Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 93mOhm Max Current - Saturation (Isat): 2.6A Material - Core: Metal Composite Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 (2520 Metric) Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Inductance: 2.2 µH Current Rating (Amps): 2.2 A  | 
        
                             auf Bestellung 82088 Stücke: Lieferzeit 10-14 Tag (e) | 
        
            
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| CIGW252010GL2R2MNE | Hersteller : Samsung Electro-Mechanics | 
            
                         Power Inductors - SMD CIGW,Wire wound,1008,2.2uH,1.0?,7 embossed,-20 20%         | 
        
                             auf Bestellung 82325 Stücke: Lieferzeit 10-14 Tag (e) | 
        
            
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