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CMG06(TE12L,Q,M)

CMG06(TE12L,Q,M) Toshiba Semiconductor and Storage

CMG06_TE12L_Q_Web.pdf Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 600V 1A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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Technische Details CMG06(TE12L,Q,M) Toshiba Semiconductor and Storage

Description: DIODE GEN PURP 600V 1A M-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: M-FLAT (2.4x3.8), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.

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CMG06(TE12L,Q,M) CMG06(TE12L,Q,M) Hersteller : Toshiba CMC02_catalog_en_20140911-1282066.pdf Rectifiers 600V Vrrm 1.0A IF 1.1V VFM 15A IFRM
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