Produkte > CENTRAL SEMICONDUCTOR CORP > CMLDM3737 TR PBFREE
CMLDM3737 TR PBFREE

CMLDM3737 TR PBFREE Central Semiconductor Corp


CMLDM3737.PDF Hersteller: Central Semiconductor Corp
Description: MOSFET 2N-CH 20V 0.54A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 21000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.37 EUR
6000+ 0.35 EUR
9000+ 0.33 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details CMLDM3737 TR PBFREE Central Semiconductor Corp

Description: MOSFET 2N-CH 20V 0.54A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 540mA, Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V, Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.

Weitere Produktangebote CMLDM3737 TR PBFREE nach Preis ab 0.32 EUR bis 1.09 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
CMLDM3737 TR PBFREE CMLDM3737 TR PBFREE Hersteller : Central Semiconductor Corp CMLDM3737.PDF Description: MOSFET 2N-CH 20V 0.54A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 22213 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
28+ 0.94 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 24
CMLDM3737 TR PBFREE CMLDM3737 TR PBFREE Hersteller : Central Semiconductor CSEM_S_A0001012876_1-2539253.pdf MOSFET 20V Dual N-Ch FET 8.0Vgs 540mA 350mW
auf Bestellung 341924 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
48+1.09 EUR
56+ 0.93 EUR
100+ 0.67 EUR
500+ 0.52 EUR
1000+ 0.42 EUR
3000+ 0.34 EUR
9000+ 0.32 EUR
Mindestbestellmenge: 48