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CMS04N06Y-HF

CMS04N06Y-HF Comchip Technology

QW-JTR58 CMS04N06Y-HF RevB.PDF
Hersteller: Comchip Technology
MOSFETs MOSFET N-CH 60VDS 20VGS 4A SOT-223
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Lieferzeit 10-14 Tag (e)
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3+1.3 EUR
10+0.8 EUR
100+0.53 EUR
500+0.42 EUR
1000+0.35 EUR
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Technische Details CMS04N06Y-HF Comchip Technology

Description: MOSFET N-CH 60V 4A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).

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CMS04N06Y-HF CMS04N06Y-HF Hersteller : Comchip Technology Description: MOSFET N-CH 60V 4A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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