CMS04N06Y-HF Comchip Technology

Description: MOSFET N-CH 60V 4A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).