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CMS04N06Y-HF Comchip Technology


qw-jtr5820cms04n06y-hf20revb.pdf Hersteller: Comchip Technology
N-Channel MOSFET
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Technische Details CMS04N06Y-HF Comchip Technology

Description: MOSFET N-CH 60V 4A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V.

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CMS04N06Y-HF CMS04N06Y-HF Hersteller : Comchip Technology Description: MOSFET N-CH 60V 4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
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CMS04N06Y-HF CMS04N06Y-HF Hersteller : Comchip Technology QW-JTR58_CMS04N06Y-HF_RevB-1846970.pdf MOSFET MOSFET N-CH 60VDS 20VGS 4A SOT-223
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