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CMS120N080B

CMS120N080B Bruckewell

CMS120N080B.pdf Hersteller: Bruckewell
Description: SIC N-MOSFET,1200V,35A,TO-263-7L
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 20V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
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Technische Details CMS120N080B Bruckewell

Description: SIC N-MOSFET,1200V,35A,TO-263-7L, Packaging: Bulk, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 20V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V.