
auf Bestellung 3159 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 1.26 EUR |
10+ | 1.00 EUR |
100+ | 0.67 EUR |
250+ | 0.65 EUR |
500+ | 0.53 EUR |
1000+ | 0.48 EUR |
3000+ | 0.43 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CMS15(TE12L,Q,M) Toshiba
Description: DIODE SCHOTTKY 60V 3A M-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 102pF @ 10V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: M-FLAT (2.4x3.8), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A, Current - Reverse Leakage @ Vr: 300 µA @ 60 V.
Weitere Produktangebote CMS15(TE12L,Q,M)
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
CMS15(TE12L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 102pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V |
Produkt ist nicht verfügbar |
|
![]() |
CMS15(TE12L,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 102pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 60 V |
Produkt ist nicht verfügbar |