CMS25P06H8-HF Comchip Technology

Description: MOSFET P-CH 60V 25A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PDFN (5x6), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).