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CMS25P06H8-HF Comchip Technology


Hersteller: Comchip Technology
Description: MOSFET P-CH 60V 25A 35W PDFN5X6-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 30 V
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Technische Details CMS25P06H8-HF Comchip Technology

Description: MOSFET P-CH 60V 25A 35W PDFN5X6-, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 30 V.

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CMS25P06H8-HF CMS25P06H8-HF Hersteller : Comchip Technology QW_JTR159_CMS25P06H8_HF_RevA-3179959.pdf MOSFET MOSFET P-CH 60V 25A 35W PDFN5x6-8L
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