CMS35N04V8-HF Comchip Technology
Hersteller: Comchip Technology
Description: MOSFET N-CH 40V 35A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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Technische Details CMS35N04V8-HF Comchip Technology
Description: MOSFET N-CH 40V 35A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 44W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).