CMS35N04V8-HF Comchip Technology
Hersteller: Comchip TechnologyDescription: MOSFET N-CH 40V 35A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
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Technische Details CMS35N04V8-HF Comchip Technology
Description: MOSFET N-CH 40V 35A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V.