CMS45P03H8-HF Comchip Technology

Description: MOSFET P-CH 30V 9.6A/45A DFN5X6, Input Capacitance (Ciss) (Max) @ Vds: 2215 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: DFN5x6 (PR-PAK), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 45W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 45A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).