CMSP2011A6-HF Comchip Technology

Description: MOSFET P-CH 20V 11A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 7.2A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFNWB2x2-6L-J, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 6 V.