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CP373-CTLDM303N-CT Central Semiconductor Corp


CP373_DS.pdf Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 30V 3.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
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Technische Details CP373-CTLDM303N-CT Central Semiconductor Corp

Description: MOSFET N-CH 30V 3.6A DIE, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: Die, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): 12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V.