Produkte > ONSEMI > CPH3355-TL-H

CPH3355-TL-H onsemi


ONSM-S-A0000180929-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: CPH3355 - SINGLE P-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 3-CPH
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 156mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 170718 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
1730+0.26 EUR
Mindestbestellmenge: 1730 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details CPH3355-TL-H onsemi

Description: CPH3355 - SINGLE P-CHANNEL POWER, Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: 3-CPH, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 156mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.