Produkte > ON SEMICONDUCTOR > CPH3459-TL-W
CPH3459-TL-W

CPH3459-TL-W ON Semiconductor


CPH3459-D-1803590.pdf Hersteller: ON Semiconductor
MOSFET NCH 200V 0.5A 4V DRIVE
auf Bestellung 3271 Stücke:

Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details CPH3459-TL-W ON Semiconductor

Description: MOSFET N-CH 200V 500MA 3CPH, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 3.7Ohm @ 250mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: 3-CPH, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 20 V.

Weitere Produktangebote CPH3459-TL-W

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CPH3459-TL-W CPH3459-TL-W Hersteller : onsemi Description: MOSFET N-CH 200V 500MA 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 250mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPH3459-TL-W CPH3459-TL-W Hersteller : onsemi Description: MOSFET N-CH 200V 500MA 3CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 250mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH